Method of two-step annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile

ABSTRACT

An embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density.  
     This annealing step is selected from a group of four re-oxidizing techniques:  
     Consecutive annealing in a mixture of H2 and N2 (preferably less than 20% H2), and then a mixture of O2 and N2 (preferably less than 20% O2);  
     annealing by a spike-like temperature rise (preferably less than 1 s at 1000 to 1150° C.) in nitrogen-comprising atmosphere (preferably N2/O2 or N2O/H2);  
     annealing by rapid thermal heating in ammonia of reduced pressure (preferably at 600 to 1000° C. for 5 to 60 s);  
     annealing in an oxidizer/hydrogen mixture (preferably N2O with 1% H2) for 5 to 60 s at 800 to 1050° C.

FIELD OF THE INVENTION

[0001] The present invention is related in general to the field ofelectronic systems and semiconductor devices and more specifically tothe fabrication and processing of ultra-thin gate dielectric layers.

DESCRIPTION OF THE RELATED ART

[0002] The trend in semiconductor technology to double the functionalcomplexity of its products every 18 months (Moore's “law”), which isstill valid today after having dominated the industry for the last threedecades, has several implicit consequences. First, the cost perfunctional unit should drop with each generation of complexity so thatthe cost of the product with its doubled functionality would increaseonly slightly. Second, the higher product complexity should largely beachieved by shrinking the feature sizes of the chip components whileholding the package dimensions constant; preferably, even the packagesshould shrink. Third, the increased functional complexity should beparalleled by an equivalent increase in reliability of the product. Andfourth, but not least, the best financial profit rewards were held outfor the ones who were ahead in the marketplace in reaching thecomplexity goal together with offering the most flexible products forapplication.

[0003] The scaling of the components in the lateral dimension requiresvertical scaling as well so as to achieve adequate device performance.This vertical scaling requires the thickness of the gate dielectric,commonly silicon dioxide (SiO2) to be reduced. Thinning of the gatedielectric provides a smaller barrier to dopant diffusion from apoly-silicon gate structure (or metal diffusion from a metal gatestructure) through the underlying dielectric, often resulting in deviceswith diminished electrical performance and reliability. In ultra-thindielectric layers, interfaces with their unwelcome electronic states andcarrier traps may finally dominate the electrical characteristics.

[0004] One way of reducing these problems is to use silicon nitride asthe gate dielectric layer instead of silicon dioxide. Silicon nitridehas a higher dielectric constant than typical thermally grown SiO2 andprovides greater resistance to impurity diffusion. However, theelectrical properties of standard deposited silicon nitride films arefar inferior to thermal oxides. One approach for silicon nitride filmsas gate insulators employs an oxide layer between the nitride layer andthe substrate; see Xie-wen Wang et al., “Highly Reliable Silicon NitrideThin Films Made by Jet Vapor Deposition”, Japan J. Appl. Phys., vol. 34,pp. 955-958, 1995. Unfortunately, this technique has numerous practicalshortcomings.

[0005] Another approach of maintaining the benefit of the electricalproperties of the oxide film while also getting the barrier propertiesof a nitride film is to incorporate nitrogen into a gate oxide layer. Inknown technology, this is accomplished by a nitride oxide processinvolving ammonia to penetrate the gate oxide at temperatures in excessof 1000° C. Once the high temperature reaction has begun, it isdifficult to control the concentration of the nitrogen incorporated intothe gate oxide. Excessive nitrogen near the interface between thesemiconductor substrate and the gate oxide can adversely affect thethreshold voltage and degrade the channel mobility of the device due tocharged interface traps associated with the nitrogen.

[0006] As described by S. V. Hattangady et al., “Controlled NitrogenIncorporation at the Gate Oxide Surface”, Appl. Phys. Lett. vol. 66. p.3495, 1995, a high pressure and low power process provides nitrogenincorporation specifically at the gate/conductor interface. The longexposure time to the plasma increases the probability of charge-induceddamage to the oxide and reduces the production throughput.

[0007] In U.S. Pat. No. 6,136,654, issued on Oct. 24, 2000 (Kraft etal., “Method of Forming Thin Silicon Nitride or Silicon Oxynitride GateDielectrics”), the SiO2 (or oxynitride) layer is subjected to anitrogen-containing plasma so that the nitrogen is either incorporatedinto the SiO2 layer or forms a nitride layer at the surface of thesubstrate. The source of nitrogen in the plasma is comprised of amaterial consisting of N2, NH3, NO, N2O, or mixtures thereof. Thismethod provides a non-uniform nitrogen distribution in the SiO2 layerand is applicable to relatively thick oxide layers (1 to 15 nm); it isnot suitable for ultra-thin SiO2 layers (0.5 to 2 nm).

[0008] An urgent need has, therefore, arisen for a coherent, low-costmethod of plasma nitridation and re-oxidation and damage healing ofultra-thin gate oxide layers. The method should further produceexcellent electrical device performance, mechanical stability and highreliability. The fabrication method should be simple, yet flexibleenough for different semiconductor product families and a wide spectrumof design and process variations. Preferably, these innovations shouldbe accomplished without extending production cycle time, and using theinstalled equipment, so that no investment in new manufacturing machinesis needed.

SUMMARY OF THE INVENTION

[0009] An embodiment of the present invention is a method of forming anultra-thin dielectric layer, the method comprising the steps of:providing a substrate having a semiconductor surface; forming anoxygen-containing layer on the semiconductor surface; exposing theoxygen-containing layer to a nitrogen-containing plasma to create auniform nitrogen distribution throughout the oxygen-containing layer;and re-oxidizing and annealing the layer to stabilize the nitrogendistribution, heal plasma-induced damage, and reduce interfacial defectdensity.

[0010] This annealing step is selected from a group of four re-oxidizingtechniques:

[0011] Consecutive annealing in a mixture of H2 and N2 (preferably lessthan 20% H2), and then a mixture of O2 and N2 (preferably less than 20%O2);

[0012] annealing by a spike-like temperature rise (preferably less than1 s at 1000 to 1150° C.) in nitrogen-comprising atmosphere (preferablyN2/O2 or N2O/H2);

[0013] annealing by rapid thermal heating in ammonia of reduced pressure(preferably at 600 to 1000° C. for 5 to 60 s);

[0014] annealing in an oxidizer/hydrogen mixture (preferably N2O with 1%H2) for 5 to 60 s at 800 to 1050° C.

[0015] Another embodiment of the present invention is a method offorming a transistor having a conductive gate structure disposed on anultra-thin gate dielectric layer, the method comprising the steps of:Providing a substrate having a semiconductor surface; providing anultra-thin oxygen-containing dielectric layer, preferably SiO2 or anoxynitride, on the semiconductor surface; subjecting the dielectriclayer to a nitrogen-containing plasma so that a uniform nitrogendistribution is created throughout the oxygen-containing layer;subjecting the nitride oxygen-containing layer to an annealing andre-oxidation step selected from techniques listed above; and wherein thegate dielectric layer is comprised of the annealed dielectric layerhaving the uniform and stabilized nitrogen distribution. Preferably, theconductive gate structure is comprised of doped poly-silicon or a metal.Forming the source, drain and contacts completes the transistor.

[0016] Another embodiment of the present invention is a method offorming a capacitor having a capacitor dielectric comprising the stepsof: providing a substrate having a semiconductor surface; forming afirst electrode over the semiconductor surface; providing an ultra-thindielectric layer on the first electrode, the dielectric layer comprisedof an oxide, preferably SiO2 or an oxynitride; subjecting the dielectriclayer to a nitrogen-containing plasma so that nitrogen is uniformlydistributed throughout the layer; annealing the dielectric layer;forming a second electrode on the dielectric layer; wherein thecapacitor dielectric layer is comprised of the annealed dielectric layerhaving the uniform and stabilized nitrogen distribution.

[0017] It is a technical advantage of the present invention that it isequally applicable to NMOS and PMOS transistors with ultra-thin gateoxides. The invention is well suited for the continuing trend of deviceminiaturization.

[0018] The technical advances represented by the invention, as well asthe aspects thereof, will become apparent from the following descriptionof the preferred embodiments of the invention, when considered inconjunction with the accompanying drawings and the novel features setforth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

[0019]FIGS. 1, 2 and 3 are schematic cross sections of an integratedcircuit structure as it is fabricated following the flow of processsteps 1, 2 and 3 of the first embodiment of the invention.

[0020]FIG. 2 further indicates details of the nitridation process step.

[0021]FIG. 3 further indicates options and details of the re-oxidationand annealing process step.

[0022]FIG. 4 shows schematic cross sections of an integrated circuitstructure as it is fabricated following the process flow of the secondembodiment of the invention.

[0023]FIG. 5 shows schematic cross sections of an integrated circuitstructure as it is fabricated following the process flow of the thirdembodiment of the invention.

[0024]FIG. 6 is a graph illustrating the amounts and locations ofnitrogen and oxygen in a silicon dioxide layer, as they contribute tothe nitridation technique of the invention.

[0025]FIG. 7 is a graph illustrating the amounts and locations ofnitrogen and oxygen in an ultra-thin silicon dioxide layer for theoptimized nitridation technique of the invention.

[0026]FIG. 8 is a temperature profile of the sequential H2/N2 and O2N2annealing process of the invention.

[0027]FIG. 9A is a temperature profile of the conventional rapid thermalannealing process.

[0028]FIG. 9B is a temperature profile of the temperature “spike”annealing process of the invention.

[0029]FIG. 10 is a temperature profile of the rapid ammonia annealingprocess of the invention.

[0030]FIG. 11 is a temperature profile of the H2/N2O mixture annealingprocess of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0031] The present invention is related to U.S. Pat. No. 6,136,654,issued on Oct. 24, 2000 (Kraft et al., “Method of Forming Thin SiliconNitride or Silicon Oxynitride Gate Dielectrics”).

[0032]FIGS. 1, 2 and 3 illustrate the 3-step process flow of growing,nitriding, and annealing ultra-thin oxide layers according to theinvention. The following description is centered around two embodimentsof the invention, the process features and the formation of a gatedielectric, the methods of the invention are not limited to gatedielectrics. The embodiments can be used to form other layers requiredin the production of semiconductor devices. For example, the inventioncan be used to form the dielectric material in a capacitor structure, orto isolate conductive structures. Furthermore, the semiconductor doesnot necessarily have to be silicon (n-type or p-type), but may besilicon germanium, gallium arsenide or another III-V compound, oranother compound material used in semiconductor device manufacturing.

[0033] In FIG. 1, the substrate 101 is preferably a silicon substrate oran epitaxial silicon layer formed on a silicon substrate. It maygenerally be a substrate with a semiconductor surface 102. An insulatinglayer 103 is formed on surface 102. Layer 103 contains oxygen, and ispreferably silicon dioxide SiO2. Other oxygen-containing insulatingmaterials for layer 103 include oxynitride and other insulators.Preferably, layer 103 is grown by the process step 104 of rapid thermaloxidation in a furnace. The preferred thickness range is between 0.8 and2.0 nm. Consequently, layer 103 is classified as “ultra-thin”. While thefollowing description of the invention also holds for depositedinsulating layers 103, the electrical quality of deposited ultra-thinoxygen-containing layers has so far been inferior to thermally grownlayers.

[0034] In FIG. 2, the process step 204 of plasma nitridation of layer103 is illustrated. The oxygen-containing layer 103 is exposed to plasma201 which contains nitrogen. A preferred gas composition of the plasmais 75% helium and 25% nitrogen at a pressure of 20 to 80 mTorr. Theplasma nitrogen concentration may vary from 10% to 25%, with heliumproviding the balance. Instead of helium, neon or argon may be chosen. Asource of nitrogen is introduced into the plasma to form thenitrogen-containing plasma. The source of nitrogen comprises a materialselected from a group consisting of N2, NH3, NO, N2O, and a mixturethereof. The plasma operates at 10 to 50 W for 10 to 60 s. The substratecan be unbiased in which case the ionized substances are accelerated bythe plasma potential (which is typically on the order of 20 V) and thenimplanted into the insulating surface. A bias voltage can be applied tothe substrate to further accelerate the ions from the plasma and implantthem deeper into the insulating layer. Either a dc or a rf bias voltagecan be used to bias the substrate.

[0035] It is an important aspect of the present invention that theplasma nitridation process creates a uniform nitrogen distributionthroughout layer 103. Details about the method and the results aredescribed in more detail in FIGS. 6 and 7.

[0036] In FIG. 3, the oxygen-containing insulating layer with uniformnitrogen distribution throughout, designated 301, is subjected to theprocess step 304 of annealing and re-oxidation, another important aspectof the present invention. This annealing step 304 is selected from agroup of four re-oxidizing techniques:

[0037] Step 310: Consecutive annealing in a mixture of H2 and N2, andthe a mixture of O2 and N2. Detail described in FIG. 8.

[0038] Step 311: Annealing by a “spike”-like temperature rise innitrogen-comprising atmosphere. Detail described in FIGS. 9A and 9B.

[0039] Step 312: Annealing by rapid thermal heating in ammonia ofreduced pressure. Detail described in FIG. 10.

[0040] Step 313: Annealing in an oxidizer/hydrogen mixture (preferably aH2/N2O mixture). Detail described in FIG. 11.

[0041] Any one of these four re-oxidation techniques of the presentinvention provides healing of the plasma-induced damage, stabilizationof the nitrogen distribution, and reduction the interfacial defectdensity. The reduced interface state density, in turn, provides highercarrier mobility (for instance, electron mobility) in the channel of thetransistor formed with the stabilized dielectric layer as gatedielectric.

[0042] Referring to the embodiment of FIG. 4, the process flow offorming a transistor gate having an ultra-thin gate dielectric layer isschematically shown. Gate insulator 103 is formed on semiconductorsubstrate 101 (preferably a silicon substrate or a silicon epitaxiallayer) preferably in a thermal growing process as described above. Thepreferred result is an ultra-thin (about 0.8 to 2.0 nm thick)oxygen-containing layer such as silicon dioxide or oxynitride. Next, thesubstrate is subjected to a nitrogen-containing plasma 201, provided bya nitrogen-containing source such as N2, NH3, NO, or N2O. Thisnitridation process results in a layer 301 having a uniform distributionof nitrogen throughout the oxygen-containing layer.

[0043] In order for dielectric layer 301 to be used as a transistor gatedielectric, a conductive gate structure 402 is deposited and patternedon the gate dielectric layer 401. Typically, gate structure 402 iscomprised of doped poly-silicon or metal. Finally, source and drain ofthe transistor are formed, together with their respective contacts (notshown in FIG. 4).

[0044] Referring to the embodiment of FIG. 5, the process flow offorming a capacitor having an ultra-thin capacitor dielectric layer isschematically shown. A small portion of the integrated circuit providesfirst electrode 501 deposited over the semiconductor surface 502 ofsubstrate 503. The dielectric layer 504 is then deposited over the firstelectrode 501. Preferably, it is an ultra-thin silicon dioxide oroxynitride layer in the thickness range 0.8 to 2.0 nm. The arrangementis subjected to an oxygen-containing plasma 505, provided by anitrogen-containing source such as N2, NH3, NO, or N2O. This nitridationprocess results in a layer 506 having a uniform distribution of nitrogenthroughout the oxygen-containing layer. A second electrode 507 is formedon the dielectric layer 506, completing the fabrication of a capacitorwith the ultra-thin dielectric layer 506.

[0045] The formation of a uniform SiON layer by plasma nitridationaccording to this invention is shown in more detail in the examples ofthe Time-of-Flight Secondary Ion Mass Spectroscopy (ToF SIMS) profilesof FIGS. 6 and 7. In both figures, the nitrogen concentration (in %) isplotted as a function of depth (measured in nm) on the left hand side,and the oxygen concentration (in %) as a function of depth (in nm) onthe right hand side. A preferred plasma of this invention is a mixtureof 75% He and 25% nitrogen at a pressure of 20 to 80 mTorr, operated atan rf power of 100 to 300 W and a flow rate of 200 to 400 standardcm3/min for 10 to 60 s.

[0046] It has been observed that for relatively thick (2 to 3 nm) oxidelayers, charged metastable nitrogen plasma ions create a top surfacenitridation; see region 602 of curve 601 in FIG. 6. In contrast, forultra-thin (0.8 to 2 nm) oxide layers, these charged metastable nitrogenions create an interfacial nitridation, see region 604 of curve 603. Forthe nitrogen profile in ultra-thin SiO2 layers of FIG. 7, this effect iscombined with the distribution of the neutral metastable nitrogen ions.These ions create a maximum of implanted nitrogen close to the surface.N2+ radical generation is suppressed. Consequently, the combinednitrogen profile 701 of these distributions exhibits an approximatelyuniform nitrogen concentration from the surface to a depth of about 1.5nm, resulting in an homogeneous nitrogen distribution in the ultrathinSiO2 layer.

[0047] For the oxygen distribution, the SIMS profiles examples in FIG. 6indicate, as expected, a practically uniform oxygen concentration inrelatively thick oxide layers (profile 610, uniform to a depth of about1.7 nm) as well as ultra-thin layers (profile 611, uniform to a depth ofabout 1.0 nm). For ultra-thin layers, the observed oxygen uniformity isconfirmed by profile 702 in FIG. 7. The combination of the examples ofuniform nitrogen and oxygen distributions of FIGS. 6 and 7 results in ahomogeneous SiON distribution in ultra-thin oxide layers.

[0048]FIG. 8 illustrates the temperature-time sequence (not to scale) ofthe annealing and re-oxidation method using consecutively a mixture ofH2 and N2 and then O2 and N2 according to the present invention. Thismethod is intended to heal plasma-induced damage after thenitrogen-containing plasma exposure of ultra-thin oxygen-containinglayers (0.8 to 2.0 nm). The N2/H2 mixture contains a maximum of 20% H2(a successful concentration may only be 1%) with the balance N2, and theO2N2 mixture contains a maximum of 20% O2 with the balance N2. For eachone of these mixtures, the preferred exposure time (801 and 802 in FIG.8) is between 5 and 60 s, the pressure 2 to 50 Torr, and the flow rate 1to 20 standard liters/min. For the N2/H2 mixture, the preferredtemperature 803 is selected between 600 and 1000° C., and for the O2/N2mixture between 800 and 1000° C. It is essential that these twoannealing steps are executed consecutively without substantial delaybetween them. Under these annealing conditions, plasma-induced damage ofthe layer can be healed, resulting in reduction of interfacial defectdensity and thus improvement of channel carrier mobility, the nitrogendistribution stabilized, and oxide-regrowth minimized.

[0049]FIGS. 9A and 9B compare the temperature-time sequences (not toscale) of the annealing and re-oxidation method of this invention usinga “spike”-like temperature exposure in nitrogen-comprising gas with theconventional rapid thermal method. Both FIGS. 9A and 9B plot thetemperature-time diagram of the process depicted. For the conventionalrapid thermal process in FIG. 9A, temperature T1 (designated 901) isbetween 600 and 1000° C., and the time-span t1 (designated 902) isbetween 5 and 60 s. This method tends to result in a non-uniformnitrogen distribution in the oxide layer, with a nitrogen-containingportion close to the surface, and a nitrogen-deficient SiO2 or SiOportion at the interface to the semiconductor substrate. The heatingramp 903 is not critical for this process.

[0050] In contrast, the temperature “spike” process of the presentinvention (FIG. 9B) uses a temperature up-ramp rate 910 of 25 to 200°C./s and a down-ramp rate 911 of 25 to 100° C./s. Thus, the peaktemperature T2 of 1000 to 1150° C. is rapidly reached and rapidlydeparted from. The time t2 (designated 912) at the peak temperature isless than 1 s. The nitrogen-comprising gas mixture is selected from agroup consisting of O2/N2, O2He, O2Ne, O2Ar, and H2/N2O. Preferably, theO2N2 mixture contains a maximum of 20% O2 with the balance N2, and theH2/N2O mixture contains a maximum 20% H2 with the balance N2O. With thisannealing method, undesirable interface states can be minimized,resulting in high channel carrier mobility; the nitrogen distribution isuniform and stabilized, with low if any excess oxide at the interface;and plasma-induced damage of the oxide layer is healed.

[0051] As stated above, in known technology a nitrided oxide processinvolves ammonia to penetrate the gate oxide at temperatures in excessof 1000° C. Once the high temperature reaction has begun, it isdifficult to control the concentration of the nitrogen incorporated intothe gate oxide. Excessive nitrogen near the interface between thesemiconductor substrate and the gate oxide can adversely affect thethreshold voltage and degrade the channel mobility of the device throughCoulomb effects of the fixed charge and interface trap charge associatedwith the nitrogen on the carriers within the channel region.

[0052] In contrast to the nitridation process of known technology, thisinvention uses ammonia for an annealing process of ultra-thin oxidelayers under much different conditions. The process is depicted in thetemperature/time plot of FIG. 10. The process operates at thetemperature T1 of only 600 to 1000° C. (designated 1001 in FIG. 10) fora time-span t1 (designated 1002) of 5 to 60 s. The up-ramp rate of 25 to80° C./s is relatively fast. The down-ramp rate is arbitrary. The dryammonia is operated at the reduced pressure of 2 to 50 Torr.

[0053] This ammonia annealing process stabilizes uniform nitrogendistribution (which would be more difficult to achieve in N2O gas).Further, it minimizes the plasma nitridation damage and the fixedinterface state density and charges. The re-oxidation is negligible.

[0054]FIG. 11 illustrates the temperature/time sequence (not to scale)of the annealing and re-oxidation method using the oxidizer and hydrogenmixture of N2O and H2. Here, the N2O is replacing O2 in order to keepthe re-oxidation rate at a minimum while stabilizing the nitrogendistribution. But in principle, the oxidizer and hydrogen mixture mayalso comprise NO and H2, or O2 and H2. The preferred mixture contains0.5 to 30% H2 (preferred content 1%) with the balance being N2O.

[0055] As FIG. 11 shows, the anneal step in N2O and H2 comprises atime-span t1 (designated as 1102) of 5 to 60 s at the temperature T1(designated as 1101) of 800 to 1000° C. The oxidizer and hydrogenmixture is flowing at 1 to 20 standard liters/min at 2 to 50 Torr. Thisoxidizer and hydrogen mixture stabilizes the nitrogen distribution inthe ultra-thin oxide layer and creates low interface state density,resulting in higher carrier (especially electron) mobility in thetransistor channel.

[0056] While this invention has been described in reference toillustrative embodiments, this description is not intended to beconstrued in a limiting sense. Various modifications and combinations ofthe illustrative embodiments, as well as other embodiments of theinvention, will be apparent to persons skilled in the art upon referenceto the description. It is therefore intended that the appended claimsencompass any such modifications or embodiments.

We claim:
 1. A method for forming an integrated circuit structure,comprising the steps of: providing a substrate having a semiconductorsurface; forming an oxygen-containing layer on said semiconductorsurface; forming a uniform nitrogen distribution throughout saidoxygen-containing layer; and re-oxidizing said layer by consecutiveanneal steps in a mixture of H2 and N2, and then a mixture of O2 and N2for healing plasma-induced damage and reducing interfacial defectdensity.
 2. The method according to claim 1 wherein saidoxygen-containing layer is an ultra-thin silicon dioxide layer in thethickness range from 0.6 to 2.0 nm.
 3. The method according to claim 1wherein said oxygen-containing layer is an oxynitride layer.
 4. Themethod according to claim 1 wherein said step of forming an oxide is arapid thermal oxidation.
 5. The method according to claim 1 wherein saidanneal steps comprise 5 to 60 s at 600 to 1000° C. in N2/H2, flowing at1 to 20 standard liters/min at 2 to 50 Torr, followed immediately by 5to 60 s at 800 to 1000° C. in O2/N2, flowing at 1 to 20 standardliters/min at 2 to 50 Torr.
 6. The method according to claim 5 whereinsaid N2/H2 mixture contains maximum 20% H2 with the balance N2, and saidO2/N2 mixture contains maximum 20% O2 with the balance N2.
 7. The methodaccording to claim 1 wherein said nitrogen-containing plasma comprisesargon or neon.
 8. The method according to claim 1 wherein said reducedinterface state density provides higher carrier mobility in the channelof said transistor.
 9. The method according to claim 1 wherein saidintegrated circuit structure includes a transistor having a conductivegate structure disposed on a gate dielectric layer; wherein saiddielectric layer, after annealing and re-oxidizing, forms said gatedielectric layer; and further comprising the step of: forming saidconductive gate structure upon said gate dielectric layer.
 10. Themethod according to claim 9 wherein said conductive gate is comprised ofdoped poly-silicon.
 11. The method according to claim 9 wherein saidgate dielectric is an ultra-thin silicon dioxide layer.
 12. The methodaccording to claim 9 further comprising the steps of forming source anddrain and their respective contacts to complete said transistor.
 13. Themethod according to claim 1 wherein said integrated circuit structureincludes a capacitor having a capacitor dielectric; and furthercomprising the steps of: forming a first electrode over said substrate,said semiconductor surface present at said first electrode; and forminga second electrode on said dielectric layer; wherein said dielectriclayer forms said capacitor dielectric.
 14. An integrated circuit havinga component as produced by the method of claim
 1. 15. The circuitaccording to claim 14 wherein said component is a transistor.
 16. Thecircuit according to claim 14 wherein said component is a capacitor.